In this project we investigate two dimensional (2D) materials, i.e. materials that consist in surfaces and/or interfaces only.
The project significantly profited from international collaborations in concerted research projects (STREP and Sinergia). Today we are members in the Graphene Flagship.
In collaboration with Dr. Marcella Iannuzzi (UZH), Dr. Matthias Muntwiler (PSI Villigen), Dr. Matthias Schreck (U Augsburg, Germany) and the European Flagship Graphene (WP3).
1999 synthesis of single layer hexagonal boron nitride on nickel.
2003 the h-BN nanomesh was discovered.
2007 lateral electrical fields were found in the pores of the nanomesh super-honeycomb.
2012 single atoms may be immobilized beneath the nanomesh forming nanotents and the concommitant vacancy defects lead to the "can-opener" effect.
2014 CVD growth of h-BN monolayer on 4-inch wafers.
2016 account on the electrochemical switching of the corrugation of the nanomesh and a concomitant macroscopic change of stiction.
2018 transfer of centimeter sized h-BN on arbitrary substrates.
2020 back-transfer of h-BN on Rh: The quality of h-BN layer can be further improved via 2D distillation.
- Prof. Thomas Greber
- Dr. Huanyao Cun
- Dr. Adrian Hemmi
- Christian Hanisch
- Wei Chuang Lee
- Ryunosuke Sagehashi
- Max Lüscher
- Mischa Stifter
- Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)
J. Phys. Mater. 4, 044012 (2021)
→ DOI: 10.1088/2515-7639/ac0d9e [arXiv]
- High-Quality Hexagonal Boron Nitride from 2D Distillation
ACS Nano, 15, 1351 (2020)
→ DOI: 10.1021/acsnano.0c08616 [arXiv]
- Correction to “Self-Assembly of a Hexagonal Boron Nitride Nanomesh on Ru(0001)”
Langmuir, 36, 6070, (2020)
→ DOI: 10.1021/acs.langmuir.0c01239
- Production and processing of graphene and related materials
2D Mater. 7, 022001 (2020)
→ DOI: 10.1088/2053-1583/ab1e0a
- The true corrugation of a h-BN nanomesh layer
2D Mater. 7, 035006 (2020)
→ DOI: 10.1088/2053-1583/ab81ae [arXiv]
- ...[→ more publications]